in Pillar 3
Synthesis of PbTe and development of in-situ device technology
PbTe nanowires will be synthesized. The expected g-factor is large (66) and the effective electron mass in PbTe is very low (m=0.01), thereby easier to reach the 1D limit with larger sub band spacing (interesting for higher temperature application). Shadow mask technology will be developed for the in-situ deposition of superconducting electrodes.